Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

Abstract

The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn ₄ Si ₇ and silicon  doped with manganese (Si ) on the photoelectric properties of  heterostructures. The role of the initial structural defects in the near-surface  layers of the single-crystal silicon on the penetration of manganese atoms  into Si upon doping from the gas phase is shown.It has been established that  at high temperatures (T>1050 ◦ C) Mn atoms deposited on the silicon  surface group together (due to surface diffusion), forming droplets of liquid  manganese, which dissolve the near-surface silicon layer, forming a liquid  solution – a melt of Mnand Si. When Mn atoms transfer from the vapor phase  into the liquid solution-melt and Si atoms diffuse into it from the  boundary regions, including the amorphous bulk Si layer, the solution-melt  increases in size and solidifies. During solidification, higher manganese  silicide (HMS) Mn ₄ Si ₇ is formed, and under silicide, due to intense diffusion  of Si atoms, the Si-Si bonds break, and an amorphous and  elastically deformed Si region is formed, which predetermines the evolution  of photoelectric phenomena in heterostructures Mn 4 Si 7 - Si-Mn ₄ Si ₇ and Mn ₄ Si ₇ -Si-M.